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2STF1550 2STN1550
Low voltage high performance NPN power transistors
Preliminary Data
Features

Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting devices in medium power SOT-89 and SOT-223 packages
1
SOT-89
4
4 3 2
1
SOT-223
2
3
Applications

Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1. Internal schematic diagram
Description
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new "PB-HCD" (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Table 1.
Device summary
Marking 1550 N1550 Package SOT-89 Tape and reel SOT-223 Packaging
Order codes 2STF1550 2STN1550
November 2008
Rev 2
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www.st.com 8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
2STF1550 - 2STN1550
1
Electrical ratings
Table 2. Absolute maximum rating
Value Symbol Parameter 2STF1550 SOT-89 VCES VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-emitter voltage (VCE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Total dissipation at Tamb = 25 C Storage temperature Max. operating junction temperature 1.4 -65 to 150 150 50 50 5 5 10 1 1.6 2STN1550 SOT-223 V V V A A A W C C Unit
Table 3.
Symbol
Thermal data
Parameter __max SOT-89 89 SOT-223 78 Unit C/W
Rthj-amb(1) Thermal resistance junction-amb
1. Device mounted on PCB area of 1 cm2
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2STF1550 - 2STN1550
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C unless otherwise specified) Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Collector-base breakdown voltage (IE = 0) Test conditions VCB = 50 V VEB = 4 V Min. Typ. Max. 0.1 0.1 Unit A A
V(BR)CBO
IC = 100 A
50
V
Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) V(BR)EBO Emitter-base breakdown voltage (IC = 0)
IC = 10 mA IE = 100 A IC = 0.5 A IC = 2 A IC = 3 A IC = 5 A IC = 3 A IC = 3 A VCE = 2 V VCE = 2 V VCE = 2 V VCE = 5 V IB = 300 mA IB = 300 mA
50
V
5 250 135 100 95 0.26 1 20 0.45 1.2 400
V
hFE (1)
DC current gain
VCE(sat) (1) VBE(sat) (1) CCBO
Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base capacitance (IE = 0) Resistive load Turn-on time Turn-off time
V V pF
VCB = 10 V, f = 1 MHz IC = 1.5 A VCC = 10 V IB1 = -IB2 = 150 mA
ton toff
90 700
ns ns
1. Pulsed duration = 300 s, duty cycle 1.5%
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Package mechanical data
2STF1550 - 2STN1550
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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2STF1550 - 2STN1550
Package mechanical data
SOT-89 MECHANICAL DATA
mm MIN. A B B1 C C1 D D1 E e e1 H L 1.4 0.44 0.36 0.35 0.35 4.4 1.62 2.29 1.42 2.92 3.94 0.89 TYP. MAX. 1.6 0.56 0.48 0.44 0.44 4.6 1.83 2.6 1.57 3.07 4.25 1.2 MIN. 55.1 17.3 14.2 13.8 13.8 173.2 63.8 90.2 55.9 115.0 155.1 35.0 mils TYP. MAX. 63.0 22.0 18.9 17.3 17.3 181.1 72.0 102.4 61.8 120.9 167.3 47.2
DIM.
P025H
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Package mechanical data
2STF1550 - 2STN1550
SOT-223 mechanical data
mm. DIM. min. A A1 B B1 c D e e1 E H V 3.30 6.70 0.02 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10 o typ max. 1.80 0.1 0.85 3.15 0.35 6.70
0046067_L
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2STF1550 - 2STN1550
Revision history
4
Revision history
Table 5.
Date 08-May-2007 12-Nov-2008
Document revision history
Revision 1 2 Initial release Updated SOT-223 mechanical data Changes
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2STF1550 - 2STN1550
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